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IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
40
69
4100
560
92
24
22
44
19
80
20
20
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.33 ° C/W
R thCH
TO-220
TO-3P, TO-263, TO-247
0.25
0.21
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive
I F = 50A, V GS = 0V, Note 1
I F =45A, -di/dt = 250A/ μ s
V R = 75V, V GS = 0V
110
90
300
1.2
A
A
V
ns
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
* : Current may be limited by external terminal current limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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